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| 2SC3838Q High-Frequency Amplifier Transistor NPN Silicon BASE COLLECTOR 3 2 3 2 1 EMITTER 1 SC-59 Value 11 20 3.0 50 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R JA TJ,Tstg Value 200 1.6 625 -55 to +150 Unit mW mW/ C C/W C Device Marking 2SC3838Q=R25 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage(I C =1 mAdc, IB =0) Collector-Base Breakdown Voltage(I C =10 uAdc, I E =0) Emitter-Base Breakdown Voltage(IE =10 uAdc, I C =0) Collector Cufoff Current(VCB =10Vdc, I E =0) Emitter Cufoff Current(VEB =2Vdc, I C=0) 1. FR-5=1.0 I I0.75 I I0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 11 20 3.0 Max 0.5 0.5 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2SC3838Q ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (I C = 5 mAdc, V CE= 10 Vdc) Transition Frequency (I C= 10 mAdc, VCB =10 Vdc, f=500MHz) Output Capacitance (I E = 0 Adc, VCB =10 Vdc, f=1MHz) Collector-Emitter Saturation Voltage (I C =10 mA, I B =5 mA) Collector-Base Time Constant (I C= 10 mAdc, VCB =10 Vdc, f=31.8MHz) Noise Factor (I C= 2 mAdc, V CE =10 Vdc, f=500MHz, R g=50) hFE 120 1.4 - 270 - - fT Cob VCE(sat) rbb'Cc NF 3.2 0.8 - GHz PF V Ps dB 1.5 0.5 12 - - 4 3.5 - WEITRON http://www.weitron.com.tw 2SC3838Q SC-59 Outline Dimension A L 3 Top View 1 SC-59 Dim A B C D G H J K L S Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 S 2 B D G C H K J All Dimension in mm WEITRON http://www.weitron.com.tw |
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